[21p-B201-1~16] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[21p-B201-8] Relationship between Hysteresis and Holes Passing through the Gate Oxide for SiC MOSFETs

〇Munetaka Noguchi¹, Akihiro Koyama¹, Toshiaki Iwamatsu¹, Hiroshi Watanabe¹, Kazuyasu Nishikawa¹ (1.Mitsubishi Electric Corp.)

Keywords:

SiC,hysteresis,hole