[21p-B203-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-B203-1] Formation of Si atomic sheets by total wet processes
-Structural control of SOI surface by wet etching-

〇(M1)Ryuto Hashimoto¹, Tetsuro Takeuchi¹, Kouji Inagaki¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:

Silicon nanosheets,Wet etching,Silicon-On-Insulator surface

Two-dimensional silicon (Si) thin film has an atomic thickness, and this is expected to be the major materials of semiconductor in the near future. However, it is quite difficult to form it by the current method. Therefore, We have developed an original method to form Si atomic sheets by applying several wet processes to the SOI (Silicon on Insulator) surface.In this method, it is most important to precisely control the structure of the SOI surface. Thus, we have investigated the wet-processing properties of SOI surfaces and attempted to optimize the experimental conditions.