The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-B203-1~7]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 21, 2023 1:30 PM - 3:15 PM JST
Thu. Sep 21, 2023 4:30 AM - 6:15 AM UTC
B203 (Civic Auditorium)
Takashi Hasunuma(Univ. of Tsukuba)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-B203-1]Formation of Si atomic sheets by total wet processes
-Structural control of SOI surface by wet etching-

〇(M1)Ryuto Hashimoto1, Tetsuro Takeuchi1, Kouji Inagaki1, Kenta Arima1 (1.Osaka Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[21p-B203-2]Selective etching of Ge surface assisted by nanocarbon catalysis
- Effect of oxidant added to etchant on etching properties -

〇(M1)Seiya Yamamoto1, Junhuan Li1, Kouji Inagaki1, Kenta Arima1 (1.Osaka Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[21p-B203-3]Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator for low-voltage operation of floating-gate nonvolatile memory

〇(DC)EUNKI HONG1, Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)English Presentation

[21p-B203-4]Improved bottom cell current in perovskite/silicon tandem solar cells by double-sided nanopyramid Si texture

〇(D)Yuqing Li1, Hitoshi Sai2, Calum McDonald2, Zhihao Xu2, Yasuyoshi Kurokawa1, Noritaka Usami1, Takuya Matsui2 (1.Nagoya Univ., 2.AIST)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[21p-B203-5]Transport Calculation for Atomistic Analysis of Effects of Surfaces/Interfaces on Electron Mobility in MoS2

〇Takahisa Tanaka1 (1.Keio Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[21p-B203-6]Carrier Transport Analyses for Nanosheet MOSFETs

〇Koichi Fukuda1, Junichi Hattori1 (1.AIST)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B203-7]Numerical Analysis of Surface Roughness Scattering in Semiconductor Nanosheet

〇Jo Okada1, Hajime Tanaka1, Nobuya Mori1 (1.Osaka University)
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