[21p-B203-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[21p-B203-3] Ar/N₂-plasma sputtering gas pressure dependence on the LaB_xN_y insulator for low-voltage operation of floating-gate nonvolatile memory

〇(DC)EUNKI HONG¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

Keywords:

Floating-gate memory,Ar/N2-plasma sputtering

In this study, we have investigated the Ar/N₂-plasma sputtering gas pressure dependence on the LaB_xN_y insulator for the FG NVM with the development of fabrication process. The improvement of electrical characteristics were observed with subthreshold swing (SS) of 70 mV/dec. and I_ON/I_OFF of 1.7×10⁵ and larger memory window (MW) of 0.48 V for the device with LaB_xN_y deposited at 0.19 Pa under input pulse of 4.4 V/10 ms with the improvement of interface as well as film quality for the LaB_xN_y deposited at 0.19 Pa.