講演情報
[21p-B203-3]Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator for low-voltage operation of floating-gate nonvolatile memory
〇(DC)EUNKI HONG1, Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)
キーワード：
Floating-gate memory、Ar/N2-plasma sputtering
In this study, we have investigated the Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator for the FG NVM with the development of fabrication process. The improvement of electrical characteristics were observed with subthreshold swing (SS) of 70 mV/dec. and ION/IOFF of 1.7×105 and larger memory window (MW) of 0.48 V for the device with LaBxNy deposited at 0.19 Pa under input pulse of 4.4 V/10 ms with the improvement of interface as well as film quality for the LaBxNy deposited at 0.19 Pa.