Presentation Information
[21p-C402-14]Local MOS capacitance-voltage profiling of Al2O3/diamond by time-resolved scanning nonlinear dielectric microscopy
〇Kohei Yamasue1, Yu Ogata1, Tsubasa Matsumoto2, Norio Tokuda2, Yasuo Cho1 (1.Tohoku Univ., 2.Kanazawa Univ.)
Keywords:
diamond,scanning nonlinear dielectric microscopy,SNDM
By depositing an Al2O3 gate dielectric on a OH-terminated diamond (111) surface by ALD, a high-quality MOS interface has been realized and normally-off operation of an inversion channel MOSFET has been demonstrated. However, the resulting channel mobility is still lower than the expected value, and further improvement of the interface quality is an important issue. Here we present the results from nanoscale evaluation of Al2O3/OH-diamond (111) using time-resolved scanning nonlinear dielectric microscopy (time-resolved SNDM).