Session Details
[21p-C402-1~16]6.2 Carbon-based thin films
Thu. Sep 21, 2023 1:30 PM - 6:00 PM JST
Thu. Sep 21, 2023 4:30 AM - 9:00 AM UTC
Thu. Sep 21, 2023 4:30 AM - 9:00 AM UTC
C402 (Int'l Ctr.)
Osamu Maida(Osaka Univ.), Shinya Ohmagari(AIST), Masafumi Inaba(Kyushu Univ.)
[21p-C402-1]Effect of filament-temperature on homoepitaxial diamond (111) growth by HFCVD
〇Kimiyoshi Ichikawa1, Ryoma Taguchi1, Kazuki Kobayashi1, Tsubasa Matsumoto1, Kan Hayashi1, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1 (1.Kanazawa Univ.)
[21p-C402-2]Analysis of Dislocation Bundles in Single Crystal Diamond by High-Resolution EBSD
〇Koji Tanaka1, Miwako Takano2, Hitoshi Umezawa1, Yoshiaki Mokuno1, Hideali Yamada1 (1.AIST, 2.NIMS)
[21p-C402-3]Curvature evaluation of free-standing heteroepitaxial diamond thick films grown on Ir/MgO substrate
〇(M2)Tomoya Nakamura1, Yutaka Kimura2, Atsuhito Sawabe3, Ryuji Oshima1,2, Hideo Aida1 (1.Nagaoka Univ. of Tech., 2.Disco Corp., 3.Aoyama Gakuin Univ.)
[21p-C402-4]Analysis of stripe contrast observed in cross-sectional SEM image of (001) diamond films heteroepitaxially grown on Ir/sapphire substrates
〇Kouki Mochizuki1, Osamu Maida1, Seongwoo Kim2, Manabu Kato2, Koji Koyama2, Tatsuya Honda2, Shuhei Ichikawa1, Kazunobu Kojima1 (1.Osaka Univ., 2.Orbray)
[21p-C402-5]The effect of activation annealing time on the electrical properties of B-implanted type IIa CVD diamonds
〇Yuhei Seki1, Rintaro Kurashima1, Minami Yoshihara1, Yasushi Hoshino1 (1.Kanagawa Univ.)
[21p-C402-6]Formation of p-type electric conduction layer by low-concentration B ion-implantation into high purity diamond
〇(M2)Minami Yoshihara1, Yuhei Seki1, Yasushi Hoshino1 (1.Kanagawa Univ.)
[21p-C402-7]Fabrication of Li-dope diamond by nuclear transformation (3) -Investigation of thermal diffusion of Be in diamond epitaxial growth thin film-
〇Yasuto Miyake1, Hiroki Okuno1, Hideyuki Watanabe2 (1.RIKEN RNC, 2.AIST)
[21p-C402-8]Control of Hydrogen Evolution Potential of Ultrananocrystalline Diamond Thin Films for CO2 Reduction
〇Satoki Nagano1, Lama Osman1, Abdelrahman Zkria2, Hiroshi Naragino1, Tsuyoshi Yoshitake1 (1.Kyushu Univ., 2.E-JUST Ctr, Kyushu Univ.)
[21p-C402-9]Thermal conductivities of heat conduction sheets with controlling the sedimentation of diamond filler particles
〇Masafumi Inaba1, Seiya Seike1, Michihiko Nakano1, Junya Suehiro1 (1.Kyushu Univ.)
[21p-C402-10]Stabilization of C-H Diamond Surface Conductivity by Negative Ions Adsorption from Corona Discharge
〇(B)Ryosuke Yamamoto1, Xuezhen Jia1, Kento Narita1, Kosuke Ota1,2, Atsushi Hiraiwa1, Tatsuya Fujishima2, Hiroshi Kawarada1,2,3 (1.Waseda Univ., 2.Power Diamond Systems, Inc., 3.Kagami Memorial Inst.)
[21p-C402-11]Photoelectron emission mechanism in semiconductor diamond and its application to evaluation of the carrier diffusion length
Ryota Tsukamoto1,2, Shoya Yamakawa1,2, Hiromitsu Kato2, Yukako Kato2, Masahiko Ogura2, Masatsugu Nagai2, Toshiharu Makino2, 〇Daisuke Takeuchi1,2, Ichiro Shoji1 (1.Chuo Univ., 2.AIST)
[21p-C402-12]Carrier transport mechanism of permalloy/B-doped diamond Schottky contact
〇Makoto Kawano1, Carlos Cunha1, Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
[21p-C402-13]Effect of Energy Dissipation in Higher-Order Resonance on SCD MEMS Cantilevers Toward High f·Q
〇(D)Guo Chen1,2, Zilong Zhang1, Keyun Gu1, Satoshi Koizumi1, Zhaohui Huang2, Meiyong Liao1 (1.NIMS, 2.China University of Geosciences (Beijing))
[21p-C402-14]Local MOS capacitance-voltage profiling of Al2O3/diamond by time-resolved scanning nonlinear dielectric microscopy
〇Kohei Yamasue1, Yu Ogata1, Tsubasa Matsumoto2, Norio Tokuda2, Yasuo Cho1 (1.Tohoku Univ., 2.Kanazawa Univ.)
[21p-C402-15]Investigation on Hydrogen-Terminated Vertical Diamond MOSFET toward Low ON Voltage
〇Koji Amazutsumi1,2, Kosuke Ota1,2, Tatsuya Fujishima1, Hiroshi Kawarada1,2,3 (1.Power Diamond Systems, Inc., 2.Waseda Univ., 3.Kagami Memorial Inst.)
[21p-C402-16]Improvement of drain current density by swapping drain and source electrodes in vertical RF diamond MOSFETs
〇(B)Yuki Takano1, Fuga Asai1, Yukihiro Chou1, Kosuke Ota1,2, Akira Takahashi1, Atsushi Hiraiwa1, Fujisshima Tatatsuya2, Hiroshi Kawarada1,2,3 (1.Waseda Univ., 2.Power Diamond Systems,Inc., 3.Kagami Memorial Inst.)