[21p-C402-1~16] 6.2 Carbon-based thin films

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-C402-16] Improvement of drain current density by swapping drain and source electrodes in vertical RF diamond MOSFETs

〇(B)Yuki Takano¹, Fuga Asai¹, Yukihiro Chou¹, Kosuke Ota^1,2, Akira Takahashi¹, Atsushi Hiraiwa¹, Fujisshima Tatatsuya², Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.Power Diamond Systems,Inc., 3.Kagami Memorial Inst.)

Keywords:

diamond,vertical RF MOSFET

In this study, we investigated changes in the current-voltage characteristics of vertical RF diamond MOSFETs by changing the voltage applied to the electrodes during measurement, essentially exchanging the positions of the source electrode and drain electrode. The maximum current density increased by a factor of approximately 6.4 when the electrode positions were exchanged from the source electrode on the substrate surface and the drain electrode in contact with the substrate. This is because the inversion layer of the regrown layer at the bottom of the trench near the source electrode becomes thicker and the drift resistance becomes smaller, resulting in more efficient hole injection.