Presentation Information

[21p-C402-5]The effect of activation annealing time on the electrical properties of B-implanted type IIa CVD diamonds

〇Yuhei Seki1, Rintaro Kurashima1, Minami Yoshihara1, Yasushi Hoshino1 (1.Kanagawa Univ.)

Keywords:

Ion implantation,Hall effect,Diamond semiconductor