[21p-C402-1~16] 6.2 Carbon-based thin films

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[21p-C402-6] Formation of p-type electric conduction layer by low-concentration B ion-implantation into high purity diamond

〇(M2)Minami Yoshihara¹, Yuhei Seki¹, Yasushi Hoshino¹ (1.Kanagawa Univ.)

Keywords:

ion-implantation,Hall effect,Diamond semiconductor