Presentation Information
[21p-P02-4]Effect of Ar partial pressure on chemical bonding states of SiO:CH films deposited from TMVS
〇Yuki Nakaizumi1, Yasushi Inoue1, Osamu Takai2 (1.Chiba Inst. Technol., 2.Kanto Gakuin Univ.)
Keywords:
CCP-CVD,SiO:CH,TMVS
We have been studying the deposition process of SiO:CH fine particles prepared by CVD method to form SiO:CH fine particle deposition films with surface micro-convex structures. The IR results suggest that the amount of CH2 bonds in the backbone structure increases with increasing Ar partial pressure, and the proportion of amorphous carbon-like bonds in the siloxane increases with increasing Ar partial pressure.