[21p-P05-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-P05-5] Analysis of band-edge fluctuation based on optical measurements for low-temperature-grown In_yGa_1-yAs_1-xBi_x

〇Tatsuyoshi Arakawa¹, Tatsuya Umenishi¹, Seiya Saito¹, Yusaku Kozai¹, Yoriko Tominaga¹, Mitsuki Yukimune², Fumitaro Ishikawa³ (1.Grad. School of Adv. Sci. Eng., Hiroshima Univ., 2.Grad. School of Sci. Eng., Ehime Univ., 3.RC for Integr. Quantum Electron., Hokkaido Univ.)

Keywords:

Bismide III-V Semiconductor-Semimetal Compound Alloys,Low-temperature-growth,Optical absorption

In this study, we analyzed band-edge fluctuation based on optical measurements in low-temperature-grown In_yGa_1-yAs_1-xBi_x. Bandgap fluctuation and electrostatic potential fluctuation cause band-edge fluctuation. Comparing these, it was found that the former has larger fluctuation amplitude. After that, we compared with GaAs_1-xBi_x samples having same growth temperature and similar Bi composition. It showed that both bandgap fluctuation and electrostatic potential fluctuation in In_yGa_1-yAs_1-xBi_x samples are smaller than these of GaAs_1-xBi_x.