[21p-P05-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-P05-8] InAs_xSb_1-x thin film growth using LT-InSb on GaAs substrate and its evaluation

〇hirotsugu mita¹, Keisuke Koseki¹, Emin Kuwabara¹, Yuto Onoda¹, Satoshi Endoh¹, Hiroki Fujishiro¹ (1.TUS)

Keywords:

semiconductor,thin film growth

InAs_xSb_1-x, a narrow-gap semiconductor, shows the smallest band gap around As composition ratio x = 0.35, and is expected to be a channel material for high-frequency and ultra-low-power devices due to its high electron mobilityµ resulting from its small electron effective mass. We previously reported that the use of low-temperature-grown (LT-) InSb as a buffer layer improves the crystallinity of InSb thin films grown on GaAs substrates. In this study, we grew InAs_xSb_1-x thin films on GaAs substrates using LT-InSb as a buffer layer, and investigated composition control and evaluated crystalline and electrical properties.