Presentation Information
[21p-P06-1]Growth of cubic GaN layer by UHV sputter epitaxy method
〇Riku Nagayama1, Syuto Mine1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)
Keywords:
Gallium nitride,sputtering,cubic Gallium nitride
We have been performing epitaxial growth of GaN-based semiconductors using ultra-high vacuum (UHV) radio frequency magnetron sputtering. We have investigated the crystal structure of GaN layers grown directly on α-Al2O3 substrates by varying the N2/Ar reaction gas mixture ratio and substrate temperature. As a result, it was found that cubic GaN layers can be grown depending on the growth conditions. In this report, we have investigated the crystallinity of GaN layers grown on cubic substrates.