Session Details
[21p-P06-1~14]15.4 III-V-group nitride crystals
Thu. Sep 21, 2023 1:30 PM - 3:30 PM JST
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
P06 (KJ Hall)
[21p-P06-1]Growth of cubic GaN layer by UHV sputter epitaxy method
〇Riku Nagayama1, Syuto Mine1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)
[21p-P06-2]Post-annealing of hexagonal boron nitride thin films prepared by low-pressure CVD
〇Taiki Oishi1, Ruki Aoike1, Soma Ota1, Yuma Takahashi1, Akira Takemura1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical Photonics, 3.Elec. research Inst.)
[21p-P06-3]Low-pressure CVD of hexagonal boron nitride on a-plane sapphire
〇Soma Ota1, Taiki Oishi1, Ruki Aoike1, Yuma Takahashi1, Akira Takemura1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Hikariikogaku Inst., 3.Densikogaku Inst.)
[21p-P06-4]Low-pressure CVD of hexagonal boron nitride on an AlN epitaxial layer
〇Ruki Aoike1, Taiki Oishi1, Soma Ota1, Yuma Takahashi1, Akira Takemura1, Hiroko Kominami1, Kazuhiko Hara1,2,3 (1.Shizuoka Univ., 2.Medical photonics, 3.Elec. Res. Inst.)
[21p-P06-5]Development of MicroLED using Boron ion implantation and GaN:Ge sputtered layer
〇Ayumu Okui1, Shotaro Nishigaki1, Atsushi Nishikawa2, Alexander Loesing2, Masaki Shirai3, Hiroki Kobayashi3, Hiroto Sekiguchi1 (1.Toyohashi Tech, 2.ALLOS, 3.ULVAC)
[21p-P06-6]Suppression effect of compositionally graded layers on photoexcited-carrier localization in (0001) InGaN photodiodes
〇Heishiroh Dojo1, Shuhei Ichikawa1,2, Yoshinobu Matsuda3, Mitsuru Funato3, Yoichi Kawakami3, Kazunobu Kojima1 (1.Osaka Univ, 2.Reserch Center for UHVEM, Osaka Univ, 3.Kyoto univ)
[21p-P06-7]Mechanism of generation of threading dislocations in c-surface active layer nanocolumns
〇Koichiro Akasaka1, Shunsuke Ishizawa1, Koichi Morozumi1, Hiromu Miyazawa1, Yasuto Akatsuka1, Takafumi Noda1, Rie Togashi2, Katsumi Kishino2 (1.Seiko Epson Corp., 2.Sophia Nanotech.)
[21p-P06-8]Uniformity evaluation of red-nanocolumns with semipolar faceted GaInN active layers
〇Yasuto Akatsuka1, Yasuto Kakemura1, Jumpei Yamada2, Koichi Morozumi1, Shunsuke Ishizawa1, Koichiro Akasaka1, Takafumi Noda1, Rie Togashi2, Katsumi Kishino2 (1.Seiko Epson Corp., 2.Sophia Nanotech.)
[21p-P06-9]Analysis of electrical properties of anodized n-GaN in two-step wet etching method
〇Gaku Kamio1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[21p-P06-10]Evaluation of high temperature electrical properties in AlGaN/GaN recessed structures
〇Takaaki Kimura1, Tomohide Takahashi1, Ryo Tsurumaki1, Gaku Kamio1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[21p-P06-11]Control of insulating properties of SiN films for surface passivation
〇Riku Torii1, Yuuki Murayama1, Tomohide Takahashi1, Ryo Tsurumaki1, Takaaki Kimura1, Gaku Kamio1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
[21p-P06-12]Theoretical studies on characterizations of optical and thermal properties of nitride-based semiconductor alloy thin films by photothermal deflection spectroscopy
〇Mayu Nomura1, Kouki Noda1, Daichi Imai1, Takao Miyajima1 (1.Meijo Univ.)
[21p-P06-13]Band alignment of rock-salt structured AlScN
〇Yuichi Ota1, Masataka Imura2 (1.TIRI, 2.NIMS)
[21p-P06-14]Clarification of the initial stage of crystal growth of NbN on AlN(0001) by first-principles calculation
〇(M2)Ryuji Nakagoshi1, Masato Oda1 (1.Wakayama Univ.)