[21p-P06-1~14] 15.4 III-V-group nitride crystals

[21p-P06-6] Suppression effect of compositionally graded layers on photoexcited-carrier localization in (0001) InGaN photodiodes

〇Heishiroh Dojo¹, Shuhei Ichikawa^1,2, Yoshinobu Matsuda³, Mitsuru Funato³, Yoichi Kawakami³, Kazunobu Kojima¹ (1.Osaka Univ, 2.Reserch Center for UHVEM, Osaka Univ, 3.Kyoto univ)

Keywords:

InGaN,photodiode,graded layer