Presentation Information
[21p-P09-13]Growth of single-crystalline ZnO layer by UHV sputter epitaxy method
〇Ryota Misawa1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)
Keywords:
zinc oxide,sputtering method,photoluminescence
We have been growing epitaxial ZnO layers by Ultra-High Vacuum (UHV) radio frequency magnetron sputtering. We have grown ZnO layers on sapphire substrates at relatively high temperatures to produce high quality ZnO layers. As a result, it was found that a large number of oxygen vacancies existed in the ZnO layer when grown at substrate temperatures of 900°C or higher.In the present study, we investigated the crystallinity and other properties of the ZnO layers grown by changing the O2 gas mixture ratio and substrate temperature using an O2/Ar mixture.