Presentation Information
[21p-P09-2]Influence of excimer laser irradiation conditions on solid-phase crystallization of amorphous Ga2O3 thin films and fabrication of the surface microstructures
〇Daishi Shiojiri1, Ryoya Kai2, Kaneko Satoru1,2, Matsuda Akifumi2, Yoshimoto Mamoru2 (1.KISTEC, 2.Tokyo Tech)
Keywords:
wide-gap semiconductor,gallium oxide,crystal growth
Wide-gap semiconducting materials have been investigated for practical use in various devices because of advantages in these materials’ excellent electronic and optical properties. Ga2O3 has been identified as a potential wide-gap semiconductor with an Eg of > 4 eV. Among the Ga2O3 polymorphs, β-Ga2O3 is identified as thermodynamically stable phase. Its crystalline thin films have been mostly prepared at moderate to relatively high temperatures (> 400°C), and there are few reports of low-toxicity and low-temperature microstructure fabrication methods. In this study, we report the influence of excimer laser annealing conditions on the crystallinity, surface morphology, and optical property changes of Ga2O3 thin films. In addition, we also examine a low-toxic and low-temperature micropatterning process for wide-gap β-Ga2O3.