[21p-P09-1~30] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-P09-22] Evaluation of cross-sectional stress distribution of β-Ga₂O₃(001) wafer applied with bending stress using Micro-Raman spectroscopy

〇Issei Maeda¹, Yuuki Hasuike¹, Noriyuki Hasuike¹, Toshiyuki Isshiki¹, Kenji Kobayashi² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)

Keywords:

Raman spectroscopy,Ga2O3,stress