Presentation Information
[21p-P09-26]Negative differential resistance observed on Ga-Sn-O thin-film ReRAM
〇(B)Mikami Sota1, Kimura Mutsumi1, Miyato Yuji1 (1.Ryukoku Univ)
Keywords:
ReRAM,GTO,negative differential resistance
We have developed ReRAM devices consisting of gallium tin oxide (GTO) thin films. For the stable hysteresis characteristics, we adopt the process to divide the GTO films into three layers, and to adjust the oxygen flow-rates during the sputter deposition of each layer. Recently, we have studied the influence of the oxygen flow-rate condition on the device performances. Among the conditions, we newly observed the negative differential resistance phenomena, as well as resistance hysteresis. In this report, we will show and discuss the details.