[21p-P09-1~30] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-P09-7] Precursor dependence of growth rates of Ga₂O₃ films grown by mist-CVD method

〇Kazuaki Akaiwa¹, Kunio Ichino¹, Isao Takahashi², Koichi Kakimoto², Akira Yoshikawa² (1.Tottori Univ., 2.Tohoku Univ.)

Keywords:

gallium oxides,mist-CVD,thin film growth