[22a-A201-1~12] CS.8 Code-sharing Session of 6.1 & 13.3 & 13.5

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A201-1] Orientation control of Y-doped HfO₂ thin films using lattice matching

〇(M2)Yoshiki Maekawa¹, Koji Hirai¹, Kazuki Okamoto¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

Keywords:

ferroelectric materials,Pulsed laser deposition,HfO2

Hafnia-based ferroelectrics were first reported in 2011. Unlike conventional ferroelectrics such as perovskite-type structural materials, these films are widely studied for memory applications because of their stable ferroelectricity in polycrystalline and ultra-thin films of 10 nm or less. However, the electrical characterization of epitaxial films with a single orientation along the polarization axis, such as tetragonal PZT and AlN-based ferroelectrics, has not been investigated. In this study, we report on our investigation of a method for controlling the orientation of Hafnia-based thin films.