[22a-A201-1~12] CS.8 Code-sharing Session of 6.1 & 13.3 & 13.5

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[22a-A201-11] Effect of Accumulated Read Operation on Polarization State in HZO-FeFET

〇Masaki Otomo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Takagi Shinichi¹ (1.Univ. Tokyo)

Keywords:

HZO,FeFET,Read disturb

In the practical application of next-generation nonvolatile memory, it is necessary to consider read disturb, which is a characteristic change that is caused by read operations. In the case of FeFETs, a gate voltage is applied during read operation. To estimate read disturb, the effect of not only a single read operation but also multiple read operations is important. In this study, we investigated the effect of the accumulation of low voltage application on the polarization state of HZO-FeFETs when low voltage is repeatedly applied to the HZO-FeFET.