[22a-A201-1~12] CS.8 Code-sharing Session of 6.1 & 13.3 & 13.5

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-A201-5] Electronic structure of the breakdown area in a HfO₂-based ferroelectric film: Laser-based photoemission electron microscopy

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi^2,3, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

Keywords:

ferroelectric capacitor,photoemission electron microscope,nondestructive observation

Photoemission electron microscopy has been used to investigate the electronic states at dielectric breakdown (DB) spots in HfO₂-based ferroelectric capacitors. However, the energy of excitation light of 4.66 eV is low, limiting the information on defect states. In the present study, we observed a DB spot with a 5.82 eV continuous wave laser, and found that the density of states increased over a wide region above 1 eV. This indicates that high-energy continuous-wave lasers are useful for studying electronic states at DB spots.