[22a-A201-1~12] CS.8 Code-sharing Session of 6.1 & 13.3 & 13.5

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[22a-A201-6] Analysis of Polarized Domain Behavior in Hf-Zr-O Ferroelectric Thin Films

〇Shinji Migita¹, Shutaro Asanuma¹, Yukinori Morita¹, Hiroyuki Ota¹ (1.AIST)

Keywords:

ferroelectric,memory,polarized domain

HfO2 ferroelectrics are a promising new material for non-volatile memory applications as a successor to conventional PZT materials. Spontaneous polarization values and endurance are important properties of ferroelectrics, while investigations of the polarized domain behavior through dielectric response analysis are also informative. In this work, the polarized domain behavior in Hf-Zr-O capacitors has been studied using C-V measurements.