[22a-A202-1~11] 17.3 Layered materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-2] Tunnel FET by natural heterojunction structure based on Re doped MoSe₂

〇Hiryu Kozaki¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Keiji Ueno², Kosuke Nagashio¹ (1.UTokyo, 2.Saitama Univ.)

Keywords:

TMDC,TFET

Two-dimensional tunneling FETs are expected to achieve both ultra-low power operation and high drive current. We have demonstrated n-type TFET in Nb-doped p⁺-MoS₂ crystals with a single gate operation suitable for integration. However, only a single-gate p-type TFET has been reported using defect-induced n⁺-SnSe₂. In this paper, a single-gate p-type TFET is attempted using n⁺-MoSe₂, in which Mo was replaced by Re by 1% in the CVT growth stage, fabricating a natural hetero junction structure (n⁺ : bulk and p : monolayer with AuCl₃)