The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[22a-A202-1~11]17.3 Layered materials

Fri. Sep 22, 2023 9:00 AM - 12:00 PM JST
Fri. Sep 22, 2023 12:00 AM - 3:00 AM UTC
A202 (KJ Hall)
Taishi Takenobu(Nagoya Univ.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-1]Evaluation of MoS2/Cytop interface properties formed by dry process

〇Yuta Kono1, Shunto Arai2, Tomonori Nishimura1, Kaito Kanahashi1, Kosuke Nagashio1 (1.Tokyo Univ., 2.NIMS)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-2]Tunnel FET by natural heterojunction structure based on Re doped MoSe2

〇Hiryu Kozaki1, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Kosuke Nagashio1 (1.UTokyo, 2.Saitama Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[22a-A202-3]The Realization of Low Contact Resistance Sb2Te3/MoS2 Layered Structure

〇WENHSIN CHANG1, S. Hatayama1, Y. Saito1, N. Okada1, T. Endo2, Y. Miyata2, T. Irisawa1 (1.AIST, 2.TMU)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[22a-A202-4]Charge-Injection Switching of MoS2 Transistors by Interface-Confined Dipolar Layer

Hiroki Kii1, 〇Ryo Nouchi2,3 (1.Osaka Pref. Univ., 2.Osaka Metro. Univ., 3.JST-PRESTO)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-A202-5]The Electronic Property of MoS2-FET Under flowing Dopamine in Fluids

〇Tsuyoshi Takaoka1, Md Nasiruddin2, Hiroki Waizumi3, Yasuyuki Sainoo1, Atsushi Ando3, Tadahiro Komeda1 (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ., 3.AIST)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-6]Electrochemical method for obtaining more than 100 monolayer MoS2 semiconductors from transferred bulk crystals.

〇Riku Mochizuki1,2, Hikaru Okuma2, Yumiko Katayama2, Ueno Kazunori2, Norifumi Fujimura1, Daisuke Kiriya2 (1.Osaka Metro. Univ., 2.Univ. Tokyo)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[22a-A202-7]Controlling Photoisomerization and Thermal Reset of Azobenzene Molecules on the Channel of a MoS2 Field Effect Transistor

〇(D)Md Nasiruddin1, Tsuyoshi Takaoka1, Yasuyuki Sainoo1, Hiroki Waizumi1, Fatema Tul Afroz1, Kosuke Sakashita1, Aoi Sato1, Atsushi Ando2, Tadahiro Komeda1 (1.Tohoku Univ., 2.AIST)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-A202-8]Local gate control of valley current in monolayer MoS2

〇Kei Takahashi1, Kazuki Fukuda1, Kenji Watanabe2, Takashi Taniguchi2, Mengnan Ke1, Nobuyuki Aoki1 (1.Chiba Univ, 2.NIMS)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[22a-A202-9]Current-Voltage Characteristics of Edge Metal Contact for MoS2 Film Formed by Sputtering

〇Shinya Imai1, Ryosuke Kajikawa1, Takamasa Kawanago1, Iriya Muneta1, Kuniyuki Kakushima1, Tetsuya Tatsumi1, Shigetaka Tomiya1, Kazuo Tsutsui1, Hitoshi Wakabayashi1 (1.Tokyo Tech.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-10]Investigation of Crystal Growth of Aluminum Diboride and Nitrogen Reduction Reaction

〇Kazuki Nashimoto1, Yoshiko Horiguchi2, Akichika Kumatani3,4,2,5,6, Takeru Okada1 (1.Grad. Sch. Eng. Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.IEI, Tokyo Univ., 4.PRESTO, JST, 5.Grad. Sch. Environ. Stu. Tohoku Univ., 6.CSIS, Tohoku Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A202-11]Formation of heterojunctions and enhancement of junction area for realization of Z-scheme type g-C3N4/SnS2 photocatalyst

〇(M1)Yohei Mori1, Malathi Baskar1, Harish Santhanakrishnan2, Navaneethan Mani2, Atsushi Nakamura1 (1.Shizuoka Univ., 2.SRM Inst.)
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