Presentation Information
[22a-A202-4]Charge-Injection Switching of MoS2 Transistors by Interface-Confined Dipolar Layer
Hiroki Kii1, 〇Ryo Nouchi2,3 (1.Osaka Pref. Univ., 2.Osaka Metro. Univ., 3.JST-PRESTO)
Keywords:
two-dimensional semiconductor,threshold voltage shift,charge injection barrier
Two-dimensional materials obtained by exfoliation of layered crystals have a basal plane with a small number of dangling bonds, which makes it possible to easily modulate various properties by depositing different materials on the surface. For example, the threshold voltage of field-effect transistors (FETs) can be controlled using surface-deposition layers that cause charge transfer. The use of deposition layers that can be modulated by external fields opens the way for dynamic control of device characteristics. In this talk, we report an example of dynamic control of multilayer MoS2 FETs using an adsorbed layer of molecules with permanent dipoles.