[22a-A303-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-A303-1] Formation of n-type unstrained Ge_1−xSn_x(111) epitaxial layer using ion implantation

〇(M1)Yoshiki Kato¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

GeSn(111),ion implantation