Session Details
[22a-A303-1~9]13.5 Semiconductor devices/ Interconnect/ Integration technologies
Fri. Sep 22, 2023 9:00 AM - 11:15 AM JST
Fri. Sep 22, 2023 12:00 AM - 2:15 AM UTC
Fri. Sep 22, 2023 12:00 AM - 2:15 AM UTC
A303 (KJ Hall)
Takeshi Momose(Univ. of Tokyo)
[22a-A303-1]Formation of n-type unstrained Ge1−xSnx(111) epitaxial layer using ion implantation
〇(M1)Yoshiki Kato1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
[22a-A303-2]Stabilization of TiOx-based ReRAM characteristics by insertion of SiOx interlayer
〇Haruki Osawa1, Yuji Iwasawa1, Shinya Aikawa1 (1.Kogakuin Univ.)
[22a-A303-3]Unique Characteristics of SiCN Dielectric Film for Plasma Activated Direct Bonding
〇Sodai Ebiko1, Koki Onishi1, Akira Uedono2, Serena Iacovo3, Fumihiro Inoue1 (1.Yokokoku Univ., 2.Tsukuba Univ., 3.imec)
[22a-A303-4]Analysis of vacancies in wafer bonding interface by positron annihilation lifetime spectroscopy
〇Sotetsu Saito1, Nobutoshi Fujii1, Shunsuke Furuse1, Naoki Ogawa1, Suguru Saito1, Yoshiya Hagimoto1, Hayato Iwamoto1 (1.Sony Semiconductor Solutions Corp.)
[22a-A303-5]Cu wiring formed on polyimide film by selective neutral electroless copper plating
〇Yudai Hirano1, Sugiura Osamu1 (1.Chiba Inst of Tech.)
[22a-A303-6]Non-contact plating deposition of fine wiring by new electrolysis technology
〇Haruo Iwatsu1 (1.KMP Lavatory)
[22a-A303-7]Etching simulation for Si oxide film by new electrolysis technology
〇Haruo Iwatsu1, Akira Matsushima2 (1.Kumamoto KMP Laboratory, 2.Fukuoka Institute of Technology)
[22a-A303-8]Dependence of equilibrium electrode potential on magnetic field in cobalt ethylenediamine complex solution
〇Yuki Taguchi1, Sugiura Osamu1 (1.Chiba Inst of Tech)
[22a-A303-9]Examination of Co-ALD using CCTBA for high-reliable interconnects
〇Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Takeshi Momose1, Yukihiro Shimogaki1 (1.Univ. Tokyo)