Presentation Information
[22a-A303-2]Stabilization of TiOx-based ReRAM characteristics by insertion of SiOx interlayer
〇Haruki Osawa1, Yuji Iwasawa1, Shinya Aikawa1 (1.Kogakuin Univ.)
Keywords:
resistive random access memory,TiOx,SiOx
resistive random access memory,TiOx,SiOx