[22a-A303-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-A303-3] Unique Characteristics of SiCN Dielectric Film for Plasma Activated Direct Bonding

〇Sodai Ebiko¹, Koki Onishi¹, Akira Uedono², Serena Iacovo³, Fumihiro Inoue¹ (1.Yokokoku Univ., 2.Tsukuba Univ., 3.imec)

Keywords:

direct bonding,hybrid bonding