[22a-A303-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[22a-A303-7] Etching simulation for Si oxide film by new electrolysis technology

〇Haruo Iwatsu¹, Akira Matsushima² (1.Kumamoto KMP Laboratory, 2.Fukuoka Institute of Technology)

Keywords:

Etching,Wet,Directivity

Wet etching has disadvantages such as isotropy, etching rate, liquid filling, reaction difference due to liquid draining, and cleanliness of the material with respect to dry etching, and is limited to surface etching in the cleaning process. This time, we report a simulation of the possibility of new wet etching with the new electrolysis technology.