Presentation Information
[22a-A401-10]Examination on Optical Emission Spectroscopy and Ultra-fast Etching of Photoresist by Reactive Atmospheric-pressure Thermal Plasma Jet
〇Kyohei Matsumoto1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Graduate School of Advanced Science and Engineering, Hiroshima University)
Keywords:
plasma,etching,photoresist
Edge beads are formed on the edge of wafers after photoresist (PR) is coated by a spin coater.
This hinders the exposure process and also causes particles due to peeling, resulting in lower yields.Therefore, the EBR process, which removes the edge beads by using organic solvents, has been introduced.However, the reduction of carbon dioxide emissions associated with the final disposal of organic solvent wastewater is an issue that must be resolved in order to achieve carbon neutrality.We have reported a high etching rate of 61.5 µm/s by supplying oxygen radicals to PRs simultaneously with local heating by reactive atmospheric pressure thermal plasma jet (R-TPJ) irradiation.In this study, we investigated the relationship between the relative luminescence intensity of atomic oxygen radicals, R-TPJ power input, and etching rate.
This hinders the exposure process and also causes particles due to peeling, resulting in lower yields.Therefore, the EBR process, which removes the edge beads by using organic solvents, has been introduced.However, the reduction of carbon dioxide emissions associated with the final disposal of organic solvent wastewater is an issue that must be resolved in order to achieve carbon neutrality.We have reported a high etching rate of 61.5 µm/s by supplying oxygen radicals to PRs simultaneously with local heating by reactive atmospheric pressure thermal plasma jet (R-TPJ) irradiation.In this study, we investigated the relationship between the relative luminescence intensity of atomic oxygen radicals, R-TPJ power input, and etching rate.