[22a-A401-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[22a-A401-2] An investigation of novel gases for etching process by computational chemistry (II)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:

etching,novel alternative gases,dissociation channels

Perfluorocarbon, Hydrofluorocarbon, Hydrofluoroether, SF₆, NF₃ and others have been used as etching gases. However, novel alternative gases are also expected. Therefore, we investigate other favorable candidate gases. In this stage, we propose the CF₃NH₂ and CF₃NO as the candidates, because CF₃NH₂ dissociates to CF₂NH₂⁺ + F in the ionization process and to CF₂NH₂ + F in the excitation process, and CF₃NO dissociates to CF₃⁺ + NO in the ionization process and CF₃ + NO in the excitation process. These fragmented species have high reactivity and may be useful as the etchants and deposition species.