[22a-B101-1~10] 15.4 III-V-group nitride crystals

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-10] Effect of N polar AlN underlayer crystallinity on electrical properties of GaN/AlN structure

〇Taketo Kowaki¹, Koki hanasaku¹, Minagi Miyamoto¹, Daisuke Inahara¹, Aina Hiyama Zazuli¹, Kai Fuji¹, Taisei Kimoto¹, Ryosuke Ninoki¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad.School of Sci.& Tech. for Inovation Yamaguchi Univ.)

Keywords:

AlN,GaN