[22a-B101-1~10] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B101-4] GaN growth on Al-pretreated sapphire substrates without low-temperature buffer layers

〇Kodai Takemura¹, Takato Fukui¹, Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:

Crytstal Growth,GaN,MOVPE

Low-temperature (LT)-buffer layers are generally used for GaN epitaxial growth on sapphire and ScAlMgO₄ substrates. On the other hand, recently it is found that high-quality GaN can be grown on Al-pretreated ScAlMgO₄ substrates without LT- buffer layers. In this study, we report that the Al pretreatment without LT-buffer layers is effective for GaN growth on sapphire substrates.