[22a-B101-1~10] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-B101-8] Growth of N-polar AlN epilayer by ammonia free high temperature MOCVD

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:

AlN,N-polar

We realized the N-polar AlN growth by the use of TaC-coated susceptor in the AFHT-MOCVD growth. We will report the results in the conference.