[22a-B201-1~12] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[22a-B201-12] Low frequency noise measurement of 2DEG at AlGaN/GaN interface with different contacts

〇Kosuke Ueda¹, Koshi Katakura, Takuya Hoshii¹, Kazuo Tsutsui², Hitoshi Wakabayashi², Kuniyuki Kakushima¹ (1.Tokyo Tech School of Eng, 2.Tokyo Tech IIR)

Keywords:

semiconductor,GaN HEMT,Low frequency noise

Because of the noise up-conversion, it is important to reduce the low-frequency noise of GaN HEMTs. Therefore, we fabricated devices with indirect contact to 2DEGs and devices with direct contact to 2DEGs and measured the low-frequency noise. As a result, it was found that direct contact to the 2DEG reduced the low-frequency noise.