The 84th JSAP Autumn Meeting 2023
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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[22a-B201-1~12]13.7 Compound and power devices, process technology and characterization

Fri. Sep 22, 2023 9:00 AM - 12:15 PM JST
Fri. Sep 22, 2023 12:00 AM - 3:15 AM UTC
B201 (Civic Auditorium)
Kenji Shiojima(Univ. of Fukui)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[22a-B201-1][Young Scientist Presentation Award Speech] Characterization of recombination center in homoepitaxial GaN with N-atoms-displacement-related defects introduced by electron beam irradiation

〇Meguru Endo1, Masahiro Horita1,2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[22a-B201-2]Wafer-scale characterization of mosaics and the impact on point defects in GaN studied using 2D birefringence and photoluminescence measurements

〇Kohei Shima1, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[22a-B201-3]Photoluminescence spectra of p-GaN epilayers grown by halide vapor phase epitaxy

〇Shigefusa Chichibu1, Kazuki Ohnishi2, Shugo Nitta2, Yoshio Honda2,3, Hiroshi Amano2,3, Kohei Shima1 (1.IMRAM-Tohoku Univ., 2.IMaSS, Nagoya Univ., 3.Nagoya Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[22a-B201-4]First principles study on impacts of Mg agglomeration on Mg acceptor states in GaN

〇Emi Kano1, Chokawa Kenta1, Kobayashi Koki1, Otsuki Ritsuo1, Shiraishi Kenji1, Oshiyama Atsushi1, Ikarashi Nobuyuki1 (1.Nagoya Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B201-5]Electrical characterization of semi-insulating GaN substrates doped with Fe, C or Mn grown by hydride vapor phase epitaxy

〇Daiki Tanaka1, Kenji Iso2,3, Jun Suda1,3 (1.Nagoya Univ., 2.Mitsubishi Chemical, 3.Nagoya Univ. IMaSS)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B201-6]Relationship between Transistor Parameters and Circuit Parameters in GaN HEMTs (Device Simulation Study)

〇(M2)Hisashi Nishijima1, Ken Kudara2, Yutaro Yamaguch2, Toshiyuki oishi1, Shitaro Shinjo2, Koji Yamanaka2 (1.Saga Univ., 2.Mitubishi Electric)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[22a-B201-7]Drain Voltage Dependence of Low-frequency Y21 and Y22 signals in GaN HEMTs

〇Toshiyuki Oishi1, Shiori Takada1, Ken Kudara2, Yutaro Yamaguchi2, Shitaro Shinjo2, Koji Yamanaka2 (1.Saga Univ., 2.Mitsubishi Electric)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-B201-8]Relationship between Trap Positions in GaN HEMTs and Im(Y21)/Im(Y22) (Device Simulation)

〇Toshiyuki Oishi1, Shogo Morokuma1, Ken Kudara2, Yutaro Yamaguchi2, Shitaro Shinjo2, Koji Yamanaka2 (1.Saga Univ., 2.Mitsubishi Electric)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B201-9]Simultaneous Evaluation of Trap and RF Characteristics for GaN HEMTs in Transistor Operations using Frequency Dependence of S-parameters

〇(M1)Shinki Tsuyama1, Ken Kudara2, Yutaro Yamaguchi2, Toshiyuki Oishi1, Shintaro Shinjo2, Koji Yamanaka2 (1.Saga Univ., 2.Mitsubishi Electric)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B201-10]Thermal transient analysis of GaN HEMT under modulated operation using measured temperature characteristics

〇Shunsuke Ito1, Yoichi Tsuchiya1, Atsushi Tanaka2, Tadatomo Suga3, Akio Wakejima1 (1.Nagoya Inst., 2.Nagoya Univ., 3.Meisei Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[22a-B201-11]Failure Process of GaN-HEMTs by Overvoltage Stress

〇Wataru Saito1, Shin-ichi Nishizawa1 (1.Kyushu Univ.)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[22a-B201-12]Low frequency noise measurement of 2DEG at AlGaN/GaN interface with different contacts

〇Kosuke Ueda1, Koshi Katakura, Takuya Hoshii1, Kazuo Tsutsui2, Hitoshi Wakabayashi2, Kuniyuki Kakushima1 (1.Tokyo Tech School of Eng, 2.Tokyo Tech IIR)
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