[22a-B201-1~12] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[22a-B201-3] Photoluminescence spectra of p-GaN epilayers grown by halide vapor phase epitaxy

〇Shigefusa Chichibu¹, Kazuki Ohnishi², Shugo Nitta², Yoshio Honda^2,3, Hiroshi Amano^2,3, Kohei Shima¹ (1.IMRAM-Tohoku Univ., 2.IMaSS, Nagoya Univ., 3.Nagoya Univ.)

Keywords:

optical semiconductor material,HVPE,Photoluminescence

Photoluiminescence spectra of HVPE Mg-doped p-GaN will be presented.