[22a-B201-1~12] 13.7 Compound and power devices, process technology and characterization

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[22a-B201-7] Drain Voltage Dependence of Low-frequency Y21 and Y22 signals in GaN HEMTs

〇Toshiyuki Oishi¹, Shiori Takada¹, Ken Kudara², Yutaro Yamaguchi², Shitaro Shinjo², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:

GaN,trap,Y parameters

Peaks appeared Im(Y22) and Im(Y21) in low-frequency region have been investigated experimentally for drain volgate from 3 to 30 V at gate voltage of 0 V. Im(Y21) has three kinds of peaks. Two peaks of them have similar trend for Im(Y22) peaks and are identified as trap originated from Fe and self-heating effects. Therefore, one remaining peak supeculates to originated from traps located in AlGaN and/or surface.