[22a-B201-1~12] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[22a-B201-8] Relationship between Trap Positions in GaN HEMTs and Im(Y21)/Im(Y22) (Device Simulation)

〇Toshiyuki Oishi¹, Shogo Morokuma¹, Ken Kudara², Yutaro Yamaguchi², Shitaro Shinjo², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:

GaN,trap,simulation

Relationships between Y22 and Y21 in low-frequency region are investigated by device simulation for GaN HEMTs with acceptor trap. In the case of traps located in GaN layer, sign of imaginary part (Im) of Y22 is reverse against Im(Y21). On the other hands, for traps in AlGaN layser, only peak of Im(Y21) is clearly appeared as compared with Im(Y22). These properties are used to make the trap position in GaN HEMTs.