[22a-B201-1~12] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-B201-9] Simultaneous Evaluation of Trap and RF Characteristics for GaN HEMTs in Transistor Operations using Frequency Dependence of S-parameters

〇(M1)Shinki Tsuyama¹, Ken Kudara², Yutaro Yamaguchi², Toshiyuki Oishi¹, Shintaro Shinjo², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:

GaN,trap,Source Field Plates

The S-parameters of GaN HEMTs were measured in the range of 10 Hz to 3 GHz with a two-terminal pair circuit network to simultaneously evaluate the trap and RF characteristics and to study the effect of the source field plate. The results showed that in the low-frequency region, SFP reduced the electric field at the edge of the gate electrode, resulting in a reduced response of the surface-side trap. In the high-frequency region, SFP increased the source-drain capacitance, resulting in a decrease in current gain. Further, device simulations confirmed that the effect of SFP is more pronounced at high V_DS.