Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[22a-C402-10]CHARACTERISTICS OF p-NiO/ n-CdO: ZnO HETEROJUNCTIONS AND ROLE OF p-CuO HOLE TRANSPORT LAYER

〇SAHEER CHEEMADAN¹, Santhosh Kumar² (1.MAMO College, Manassery, INDIA, 2.NIT TRICHY, INDIA)

Keywords:

thin films,photodiode,RF magnetron sputtering

The objective of the present study focused on the fabrication of NiO/CuO/CdO:ZnO multilayer structures for UV photodiode using RF magnetron sputtering method. In the present study, CuO, a p-type thin layer, acts as a hole transporting layer. Results showed very high responsivity for NiO/CuO/CdO:ZnO detector compared to that of NiO/CdO:ZnO. Time-depended operation of the NiO/CuO/CdO:ZnO showed a fast UV response. The obtained results show that the fabricated photodiodes have the potential to replace the commercially available UV photodiodes.

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