講演情報
[22a-C402-10]CHARACTERISTICS OF p-NiO/ n-CdO: ZnO HETEROJUNCTIONS AND ROLE OF p-CuO HOLE TRANSPORT LAYER
〇SAHEER CHEEMADAN1, Santhosh Kumar2 (1.MAMO College, Manassery, INDIA, 2.NIT TRICHY, INDIA)
キーワード：
thin films、photodiode、RF magnetron sputtering
The objective of the present study focused on the fabrication of NiO/CuO/CdO:ZnO multilayer structures for UV photodiode using RF magnetron sputtering method. In the present study, CuO, a p-type thin layer, acts as a hole transporting layer. Results showed very high responsivity for NiO/CuO/CdO:ZnO detector compared to that of NiO/CdO:ZnO. Time-depended operation of the NiO/CuO/CdO:ZnO showed a fast UV response. The obtained results show that the fabricated photodiodes have the potential to replace the commercially available UV photodiodes.