[22p-A304-1~6] 6.4 Thin films and New materials

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[22p-A304-5] A Study of the Growth of Aluminum Oxide Thin Films by Plasma Immersion Lattice Target Sputtering Method

〇(M1)Yuu Kiyama¹, Takanobu Ima¹, Tomoki Morita¹, Masamichi Naitoh¹, Tomonori Ikari² (1.Kyushu Inst. of Tech., 2.NIT, Ube College)

Keywords:

sputtering,surface modification,Thin film fabrication

In the conventional sputtering method, there are concerns about damage to the substrate and degradation of physical properties due to plasma exposure and high plasma density. To prevent these problems, we changed the flat target to a lattice target and used a plasma immersion lattice target sputtering method in which the process place and the plasma generation place are separated. The characteristics of the aluminum oxide thin films were observed using XPS, SEM, and XRD. Also,Water repellency was observed by measuring the contact angle.