Presentation Information
[22p-A306-15]Resistance switching in C60 pyrrolidine tris acid thin film of vertical structural element
〇(M2)Takuma Hirama1,2, Hiroshi Suga1,2, Kazuhito Tsukagoshi2,1 (1.Chiba-tech, 2.NIMS)
Keywords:
fullerene,resistance switch
It has been reported that the polymerization and depolymerization of fullerenes can be used in STM to derive a resistance switch effect. We have fabricated a two-terminal device using a thin film of fullerene and confirmed a binary resistance change, but found issues with the electron irradiation process and miniaturization required to form the conductive pathways. In this study, we created a structural element in which a fullerene thin film is sandwiched between top and bottom electrodes and established the fabrication process, optimized the structure, and clarified the resistance change characteristics.