[22p-B101-1~16] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[22p-B101-1] Non-destructive and non-contact measurements of GaN/SAM templates using THz-TDSE

〇Takashi Fujii^1,2,3, Watanabe Hayato¹, Wang Dingding¹, Fukuda Tsuguo², Iwamoto Toshiyuki³, Deura Momoko⁴, Araki Tsutomu¹ (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.Fukuda Cryst.Lab., 3.NIPPO PRECISION Co.Ltd., 4.R-GIRO Ritsumeikan Univ.)

Keywords:

THz,GaN,SAM

We are developing non-contact and non-destructive inspection methods using THz-TDSE for GaN/SAM templates grown by the RF-MBE method. However, when the film thickness is 1 μm or less in the GaN / SAM template, a method of combining Fresnel analysis with analysis considering characteristic impedance was applied. Currently, we are developing a highly accurate analysis method for thinner GaN films for ultra-thin 3D semiconductor films considering the scattering of electrons at the film interface.