[22p-B101-1~16] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[22p-B101-2] Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE(II)

〇Dingding Wang¹, Hayato Watanabe¹, Takashi Fujii^1,3, Momoko Deura², Toshiyuki Iwamoto³, Atsushi Suyama⁴, Hitoshi Kawanowa⁴, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.PNP, 4.Ion Technology Center Co., Ltd)

Keywords:

gallium nitride,THz-TDSE,ion implantation